I_V Characteristic of Vertical Double Diffused Metal Oxide Semiconductor (VDMOS) Power Transistor Using Silvaco-TCAD
نویسندگان
چکیده
Today's electronics scenario finds itself with the advancement in field of foremost important component MOSFET. Though one-step ahead MOSFET, power MOS transistor such as VDMOS has recently begun to rival bipolar devices handling capability. In this paper, results simulation have been presented. Additionally, transfer characteristics are simulated. The drain current (Ids) a function gate voltage and was simulated for different work values well several oxide thickness lengths, respectively. obtained show that when length increase, threshold also increases. is virtually fabricated using ATHENA software done help ATLAS all graphs plotted Tonyplot Silvaco.
منابع مشابه
Optimization of Vertical Double-Diffused Metal-Oxide Semiconductor (VDMOS) Power Transistor Structure for Use in High Frequencies and Medical Devices
Power transistors, such as the vertical, double-diffused, metal-oxide semiconductor (VDMOS), are used extensively in the amplifier circuits of medical devices. The aim of this research was to construct a VDMOS power transistor with an optimized structure to enhance the operation of medical devices. First, boron was implanted in silicon by implanting unclamped inductive switching (UIS) and a Far...
متن کاملMetal-Oxide-Semiconductor Field Effect Transistor (MOSFET)
The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...
متن کاملA comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors
n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces a...
متن کاملPOWER SEMICONDUCTORS Design of a rugged 60 V VDMOS transistor
Vertical double diffused MOSFET (VDMOS) is an established technology for highcurrent power-switching applications such as automotive circuits. The most serious failure mode is destructive damage during inductive switching, resulting from avalanche breakdown of the forward-blocking junction in the presence of high current flow. Improving the ruggedness of the device is achieved by enhancing its ...
متن کاملPerformance Evaluation and Comparative Study of Double Gate SOI MOSFET and FinFET using Silvaco TCAD Tool
Transistor size is decreasing day by day, therefore it is difficult to overcome the problem of short channel effects. For preventing short channel effects, source/drain engineering, substrate engineering & gate engineering have been introduced. According to chronological growth of VLSI Design, there is need of non-conventional structure of MOSFET and researchers are getting shifted in search of...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: European Journal of Electrical Engineering
سال: 2022
ISSN: ['2116-7109', '2103-3641']
DOI: https://doi.org/10.18280/ejee.240407